Semiconductor laser and manufacturing method thereof
文献类型：专利
| 作者 | OHNAKA, KIYOSHI; BAN, YUZABURO; KIDOGUCHI, ISAO |
| 发表日期 | 1992-09-01 |
| 专利号 | US5144633 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and manufacturing method thereof |
| 英文摘要 | A hetero structure semiconductor laser of inner stripe type comprises an (AlxGa1-x)0.5In0.5P first cladding layer of a first conductivity type, a Ga0.5In0.5P or (AlxGa1-x)0.5In0.5P active layer, an (AlxGa1-x)0.5In0.5P second cladding layer of a second conductivity type different from the first conductivity type, an AlInP or (AlxGa1-x)0.5In0.5P confinement layer or a SiO2 having a stripe-like opening and having a refractive index lower than that of the first cladding layer, and an upper cladding layer having a band gap larger than that of the first cladding layer having a refractive index lower than that of the second cladding layer are formed successively on a GaAs substrate. Further, the width of the active layer may be narrowed as a stripe-like structure. Thus, astigmatism of a semiconductor laser becomes smaller and the threshold value of laser action becomes smaller. The manufacturing methods of such a semiconductor laser are also disclosed. |
| 公开日期 | 1992-09-01 |
| 申请日期 | 1991-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42016]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | OHNAKA, KIYOSHI,BAN, YUZABURO,KIDOGUCHI, ISAO. Semiconductor laser and manufacturing method thereof. US5144633. 1992-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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