Light emitting device and its fabrication method
文献类型:专利
作者 | TAN, MICHAEL R.T.; WANG, SHIH-YUAN; YUEN, ALBERT T. |
发表日期 | 1998-08-26 |
专利号 | EP0709939B1 |
著作权人 | HEWLETT-PACKARD COMPANY |
国家 | 欧洲专利局 |
文献子类 | 授权发明 |
其他题名 | Light emitting device and its fabrication method |
英文摘要 | The present invention provides a n-drive surface emitting laser (200) comprised of an active region (204;304), a first mirror region (206;306) having a first conductivity type, a second mirror region (208;308) having a second opposite conductivity type, the first (206;306) and second mirror regions (208;308) being located on opposite sides of the light generation region (209), a buffer region (210;310) having a second conductivity type, and a substrate (202;302)having a first conductivity type. In the preferred embodiment the first conductivity type is n-type, thus the present invention provides a method of forming an n-drive semiconductor laser on an n-type substrate. Contact is made to the p-type mirror region via a tunnel junction formed by degeneratively doping the areas of the substrate region and the buffer region which abut each other. The tunnel junction is reverse biased so that current is injected through the degeneratively doped p-n junction formed by the n+ substrate and the p-type conducting layer. |
公开日期 | 1998-08-26 |
申请日期 | 1995-10-11 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/42020] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | HEWLETT-PACKARD COMPANY |
推荐引用方式 GB/T 7714 | TAN, MICHAEL R.T.,WANG, SHIH-YUAN,YUEN, ALBERT T.. Light emitting device and its fabrication method. EP0709939B1. 1998-08-26. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。