Long-wavelength semiconductor laser
文献类型：专利
| 作者 | NUYEN, TRONG L.; DE CREMOUX, BAUDOUIN |
| 发表日期 | 1984-02-07 |
| 专利号 | US4430740 |
| 著作权人 | THOMSON-CSF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Long-wavelength semiconductor laser |
| 英文摘要 | A semiconductor laser wherein a wide range of laser emission wavelengths can be obtained by varying the composition of monocrystalline alloys employed as semiconductor material. The semiconductor structure comprises on a monocrystalline indium phosphide substrate of a predetermined conductivity type successive epitaxial layers consisting of a first confinement layer of the same conductivity type, an active layer having the formula (GaxAl1-x)0.47In0.53As where x is within the range of 0 to 0.27, and a second confinement layer of opposite conductivity type. The confinement layers are composed of either InP or a ternary alloy Al0.47In0.53As or a quaternary alloy Gax, Al1-x,Asy'Sb1-y' where x' and y' are chosen so that the material should have a predetermined crystal lattice and an energy gap of greater width than the substrate material. |
| 公开日期 | 1984-02-07 |
| 申请日期 | 1981-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42022]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THOMSON-CSF |
| 推荐引用方式 GB/T 7714 | NUYEN, TRONG L.,DE CREMOUX, BAUDOUIN. Long-wavelength semiconductor laser. US4430740. 1984-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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