分布反射型半導体レ-ザ
文献类型：专利
| 作者 | 勝田 洋彦; 末松 安晴 |
| 发表日期 | 1995-08-23 |
| 专利号 | JP1995079180B2 |
| 著作权人 | 株式会社フジクラ |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 分布反射型半導体レ-ザ |
| 英文摘要 | PURPOSE:To perform favorably buried growth and also, to form an external waveguide layer of an undoped layer by a method in the titled semiconductor laser is provided with an active layer, which is formed on a substrate or a buffer layer, the external waveguide layer, which is extended in the longitudinal direction of the laser and encircles the active layer from the side surfaces, and a clad layer which is formed on the upper surfaces of this external waveguide layer and the active layer. CONSTITUTION:An active layer 40 is slenderly formed in the longitudinal direction, the both side surfaces in the longitudinal direction are bonded to an external waveguide layer 38 and also, the both side surfaces in the width direction are bonded to the external waveguide layer 38 and all the side surfaces are surrounded with the external waveguide layer 38. Then, a buffer layer 36, the external waveguide layer 38, the active layer 40 and a clad layer 41 are formed into a slender striped structure in the longitudinal direction by etching and moreover, the upper part of the section of the striped structure is formed into a mesa form and the buffer layer, which is used as the lower part of the striped structure, is formed into a cone shape having a long tail. Moreover, an N-type InP buried layer 45 and a P-type InP buried layer 46 are buried in in such a way as to hold the striped structure between them from the both side surfaces in the width direction. |
| 公开日期 | 1995-08-23 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42024]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社フジクラ |
| 推荐引用方式 GB/T 7714 | 勝田 洋彦,末松 安晴. 分布反射型半導体レ-ザ. JP1995079180B2. 1995-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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