Semiconductor laser element having InGaAs compressive-strained quantum-well active layer
文献类型：专利
| 作者 | ASANO, HIDEKI |
| 发表日期 | 2007-09-25 |
| 专利号 | US7274720 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element having InGaAs compressive-strained quantum-well active layer |
| 英文摘要 | In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a substrate. A current-blocking layer is formed on both sides of the compressive-strain quantum-well active layer so that the compressive-strain quantum-well active layer is sandwiched between two portions of the current-blocking layer, and trenches extending along the direction of the laser resonator are formed through the current-blocking layer. Instead of providing the trenches, the widths of the layers formed above the substrate are reduced so as to form a ridge structure. |
| 公开日期 | 2007-09-25 |
| 申请日期 | 2005-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42025]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | ASANO, HIDEKI. Semiconductor laser element having InGaAs compressive-strained quantum-well active layer. US7274720. 2007-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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