混晶グレーデッドエピタキシャル基板
文献类型：专利
| 作者 | 松本 卓 |
| 发表日期 | 1995-12-20 |
| 专利号 | JP1995120624B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 混晶グレーデッドエピタキシャル基板 |
| 英文摘要 | PURPOSE:To enable the formation of an epitaxial layer of good surface condition with less dislocation by a method wherein the first layers of successive graded growth, second layers introducing misfit dislocation, and third layers reducing the unevenness in the growing surface are laminated by repetition. CONSTITUTION:GaAs is used for a bulk substrate 11, and the 100-plane for the growing surface. This substrate 11 is allowed to successively grow graded epitaxial layers 12-23 by using the hydride vapor phase growing method through the two-growing-chamber method. In these layers 12-23, the first layers, 12, 15, 18 and 21 should be successive graded layers; second layers 13, 16, 19, and 22 misfit-dislocation introuduced layers; and third layers 14, 17, 20, and 23 layers reduced in unevenness in the growing surface caused by cross-hatch. The surface of a mixed crystal graded epitaxial layer obtained by this growth shows very high mirror smoothness. |
| 公开日期 | 1995-12-20 |
| 申请日期 | 1984-04-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42027]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 松本 卓. 混晶グレーデッドエピタキシャル基板. JP1995120624B2. 1995-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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