High-temperature, uncooled diode laser
文献类型：专利
| 作者 | BHAT, RAJARAM; ZAH, CHUNG-EN |
| 发表日期 | 1995-01-10 |
| 专利号 | US5381434 |
| 著作权人 | TTI INVENTIONS A LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High-temperature, uncooled diode laser |
| 英文摘要 | A semiconductor diode laser comprising an active layer (12) having multiple compressively strained quantum wells (54) of AlGaInAs sandwiched between barriers (52) of AlGaInAs lattice-matched to InP and of a precisely defined bandgap dependent on the composition of the quantum wells. The active layer is surrounded by oppositely doped cladding layers (48, 50, 52, 58, 60) so as to form an optical waveguide. The laser very efficiently emits 3- mu m light, particularly at high operating temperatures. |
| 公开日期 | 1995-01-10 |
| 申请日期 | 1993-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42029]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TTI INVENTIONS A LLC |
| 推荐引用方式 GB/T 7714 | BHAT, RAJARAM,ZAH, CHUNG-EN. High-temperature, uncooled diode laser. US5381434. 1995-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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