Optical semiconductor device with diffraction grating structure
文献类型：专利
| 作者 | O'BRIEN, STEPHEN; ZHAO, HANMIN; MAJOR, JR., JO S. |
| 发表日期 | 1999-07-20 |
| 专利号 | US5926493 |
| 著作权人 | LUMENTUM OPERATIONS LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device with diffraction grating structure |
| 英文摘要 | Optical semiconductor devices with integrated diffraction gratings with higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical semiconductor devices, such as laser diodes or optical filters, conventionally utilize an AlGaAs grating layer that has a strong affinity for oxidation. Instead of a Al-containing layer, a quantenary, InGaAsP grating layer is utilized, lattice matched to the underlying AlGaAs/GaAs structure, substantially eliminating any problem of oxide contamination. Also, an Al-free, ternary InGaP grating layer is utilized in the InGaP/InGaAsP/GaAs material regime. The quantum well active region of these devices may also be modified to extend the gain bandwidth of operation of these devices to insure continued operation over a wider temperature range with the wavelength peak of the grating in that the wavelength peak of the grating more assuredly remains within the wavelength operating range of the device. |
| 公开日期 | 1999-07-20 |
| 申请日期 | 1997-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42032]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM OPERATIONS LLC |
| 推荐引用方式 GB/T 7714 | O'BRIEN, STEPHEN,ZHAO, HANMIN,MAJOR, JR., JO S.. Optical semiconductor device with diffraction grating structure. US5926493. 1999-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。