Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser
文献类型:专利
| 作者 | EMURA, KATSUMI; MITO, IKUO; SUEMURA, YOSHIHIKO |
| 发表日期 | 1994-06-28 |
| 专利号 | US5325382 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser |
| 英文摘要 | In order to induce a flat frequency modulation response in a multi-electrode semiconductor laser which includes an active region and at least one phase control region with no active layer, a modulation current is applied to both of the active region and the phase control region. Further, an improved electrode arrangement for inducing a flat frequency modulation response in a multi-electrode semiconductor laser is present. The semiconductor laser includes three regions: an active region, a phase control region and a Bragg reflector region. Each of the active region, the phase control region and the Bragg reflector region being provided with an electrode for receiving an injection current, wherein the electrode provided for the active layer extends into the phase control region. |
| 公开日期 | 1994-06-28 |
| 申请日期 | 1991-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42034] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | EMURA, KATSUMI,MITO, IKUO,SUEMURA, YOSHIHIKO. Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser. US5325382. 1994-06-28. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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