Self-sustained pulsation semiconductor laser
文献类型：专利
| 作者 | SAWANO, HIROYUKI |
| 发表日期 | 2000-12-12 |
| 专利号 | US6160829 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Self-sustained pulsation semiconductor laser |
| 英文摘要 | A self-sustained pulsation semiconductor laser device has a cladding layer including a pair of cladding layer portions, and a saturable absorbing layer and a buffer layer sandwiched between the pair of cladding layer portions. The semiconductor material for the buffer layer has an intermediate valence band energy between valence band energies of the saturable absorbing layer and the semiconductor material for the cladding layer portion in contact with the buffer layer, to reduce spikes formed in the valence band energy profile. Holes are smoothly injected to an active layer which lases in self-sustained pulsation at a high yield. |
| 公开日期 | 2000-12-12 |
| 申请日期 | 1998-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42035]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SAWANO, HIROYUKI. Self-sustained pulsation semiconductor laser. US6160829. 2000-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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