半導体レーザ型光増幅器
文献类型：专利
| 作者 | 橋本 順一 |
| 发表日期 | 2001-07-19 |
| 专利号 | JP3211838B2 |
| 著作权人 | 住友電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ型光増幅器 |
| 英文摘要 | PURPOSE:To provide a semiconductor laser type optical amplifier which does not rely on the polarized state of incident light. CONSTITUTION:An n-type clad layer 2 which is lattice-matched to an n-type semiconductor substrate q, the first undoped light enclosing layer 3, the first undoped active layer 4, and undoped barrier layer 5 are successively formed on the substrate q and the second active layer 6 is formed of an undoped material having a lattice constant which is smaller than that of the layer 5. Then the second undoped light enclosing layer 7, p-type clad layer 8, and p-type contact layer 9 are continuously formed by using a material having the same lattice constant as the layers 2-5 have. Thereafter, an n-type electrode 10 and p-type electrode 11 are formed. Finally, nonreflective coating films 12a and 12b are formed on both cleavage planes. |
| 公开日期 | 2001-09-25 |
| 申请日期 | 1991-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42037]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 住友電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | 橋本 順一. 半導体レーザ型光増幅器. JP3211838B2. 2001-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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