Semiconductor device and method of manufacturing the same
文献类型：专利
| 作者 | NITTA, KOICHI |
| 发表日期 | 1999-05-04 |
| 专利号 | US5900650 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and method of manufacturing the same |
| 英文摘要 | There is disclosed a semiconductor device formed on a sapphire substrate, for example, a blue LED of a double-hetero structure having a laminated structure which comprises a first cladding layer made of a first conductivity type gallium nitride based semiconductor, an active layer made of a gallium nitride based semiconductor into which impurity is not doped intentionally, and a second cladding layer made of a second conductivity type gallium nitride based semiconductor which being opposite to the first conductivity type on a sapphire substrate. A surface of the sapphire substrate is polished to have optical transmissivity of more than 60%. |
| 公开日期 | 1999-05-04 |
| 申请日期 | 1997-07-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42041]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | NITTA, KOICHI. Semiconductor device and method of manufacturing the same. US5900650. 1999-05-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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