中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ridge waveguide semiconductor laser with thin active region

文献类型:专利

作者ANTREASYAN, ARSAM; COSTRINI, GREG; HOH, PETER D.
发表日期1994-05-03
专利号US5309465
著作权人INTERNATIONAL BUSINESS MACHINES CORPORATION
国家美国
文献子类授权发明
其他题名Ridge waveguide semiconductor laser with thin active region
英文摘要The present invention provides an improved semiconductor ridge waveguide laser structure having a plurality of layers including an N-InP buffer layer and an N-type InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge waveguide laser of the present invention demonstrates a very high reliability and the fabrication process therefor is high yield. The ridge waveguide laser of the present invention demonstrates very good high temperature behavior and the design suppresses higher order modes.
公开日期1994-05-03
申请日期1992-11-05
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/42053]  
专题半导体激光器专利数据库
作者单位INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式
GB/T 7714
ANTREASYAN, ARSAM,COSTRINI, GREG,HOH, PETER D.. Ridge waveguide semiconductor laser with thin active region. US5309465. 1994-05-03.

入库方式: OAI收割

来源:西安光学精密机械研究所

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