Ridge waveguide semiconductor laser with thin active region
文献类型：专利
| 作者 | ANTREASYAN, ARSAM; COSTRINI, GREG; HOH, PETER D. |
| 发表日期 | 1994-05-03 |
| 专利号 | US5309465 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Ridge waveguide semiconductor laser with thin active region |
| 英文摘要 | The present invention provides an improved semiconductor ridge waveguide laser structure having a plurality of layers including an N-InP buffer layer and an N-type InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge waveguide laser of the present invention demonstrates a very high reliability and the fabrication process therefor is high yield. The ridge waveguide laser of the present invention demonstrates very good high temperature behavior and the design suppresses higher order modes. |
| 公开日期 | 1994-05-03 |
| 申请日期 | 1992-11-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42053]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | ANTREASYAN, ARSAM,COSTRINI, GREG,HOH, PETER D.. Ridge waveguide semiconductor laser with thin active region. US5309465. 1994-05-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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