Nitride semiconductor laser device and method of producing the same
文献类型：专利
| 作者 | VACCARO, PABLO; TSUDA, YUHZOH |
| 发表日期 | 2010-06-08 |
| 专利号 | US7733935 |
| 著作权人 | SHARP KABUSHIKI KASISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser device and method of producing the same |
| 英文摘要 | A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In. |
| 公开日期 | 2010-06-08 |
| 申请日期 | 2008-10-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42055]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KASISHA |
| 推荐引用方式 GB/T 7714 | VACCARO, PABLO,TSUDA, YUHZOH. Nitride semiconductor laser device and method of producing the same. US7733935. 2010-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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