Semiconductor laser and method of producing the semiconductor laser
文献类型：专利
| 作者 | AKIHIRO SHIMA |
| 发表日期 | 1997-06-04 |
| 专利号 | GB2280311B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method of producing the semiconductor laser |
| 英文摘要 | The laser includes a semiconductor substrate 1, a cladding layer 2 grown on the substrate, a GaInP or AlGaInP active layer 4 having a band gap energy smaller than that of the cladding layer, and a cladding layer 6 having a band gap energy larger than that of the active layer. The layer 2 has a first crystal plane that provides a quantum wire structure of the active layer and second crystal planes disposed at opposite sides of the first crystal plane. The first crystal plane forms a first angle smaller than a prescribed angle with a {100} surface of the substrate, and the second crystal plane forms a second angle larger than the first angle with the {100} surface.; The active layer 4 is grown so that the atoms are regularly ordered where the layer 4a is grown on the {100} surface and so that the atoms are disordered where the layer 4b is grown on a surface forming an angle theta 1 with the {100} surface. |
| 公开日期 | 1997-06-04 |
| 申请日期 | 1994-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42057]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | AKIHIRO SHIMA. Semiconductor laser and method of producing the semiconductor laser. GB2280311B. 1997-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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