Laser source with submicron aperture
文献类型:专利
作者 | ZIARI, MEHRDAD; DEMARS, SCOTT D.; VAIL, EDWARD C.; ZHAO, HANMIN |
发表日期 | 2002-09-03 |
专利号 | US6445723 |
著作权人 | JDS UNIPHASE CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Laser source with submicron aperture |
英文摘要 | A buried heterostructure (BH) laser source with a narrow active region is disclosed for use in close proximity with optically-addressed data storage media for read/write functionality in a relatively high data density format. The BH laser source is formed on a pregrooved or prepatterned substrate to form mesas upon which epitaxial layers are formed to form laser source active regions that have small emission apertures at the laser source facet output. Selective removal of semiconductor cladding material and replacement of this material with lower refractive index materials provides a way of obtaining further mode size-reduction at the output facet of the laser source. Each mesa has a top surface and adjacent sidewalls such that in the growth of the epitaxial layers above the active region doped with a first conductivity type, the above active region epitaxial layers depositing on the top surface deposit as a first conductivity type and depositing on said sidewalls deposit as a second conductivity type. This growth construction provides for a naturally formed p-n junction at the laser source active region and eliminates the need to perform a subsequent diffusion process to form such a junction. The optical cavities of the laser sources may be tapered so that die cleaving a predetermined point along the length of the optical cavity will provide the desired emission aperture size at the laser source output facet. |
公开日期 | 2002-09-03 |
申请日期 | 1999-05-18 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/42062] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | JDS UNIPHASE CORPORATION |
推荐引用方式 GB/T 7714 | ZIARI, MEHRDAD,DEMARS, SCOTT D.,VAIL, EDWARD C.,et al. Laser source with submicron aperture. US6445723. 2002-09-03. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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