Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
文献类型：专利
| 作者 | ASANO, HIDEKI |
| 发表日期 | 2011-05-17 |
| 专利号 | US7944567 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus |
| 英文摘要 | A semiconductor light emitting element is equipped with a layered structure including an active layer, and electrode layers at the upper and lower surfaces thereof. At least one of the upper and lower electrode layers is divided into at least two electrodes, which are separated in the wave guiding direction of light. The active layer is structured to have different gain wavelengths along the wave guiding direction, to emit light having different spectra from each region corresponding to each of the at least two electrodes. The spectral distribution of output light is enabled to be varied by individually varying the current injected by each of the at least two divided electrodes. |
| 公开日期 | 2011-05-17 |
| 申请日期 | 2006-12-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42064]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | ASANO, HIDEKI. Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus. US7944567. 2011-05-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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