A semiconductor laser device and production method thereof
文献类型：专利
| 作者 | HITOSHI, MIZUOCHI; HIDEYO, HIGUCHI |
| 发表日期 | 1992-02-05 |
| 专利号 | GB2221093B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | A semiconductor laser device and production method thereof |
| 英文摘要 | A semiconductor laser device includes a current blocking structure having a p-n-p-n structure, provided on a first conductivity type semiconductor substrate, an active region buried in a stripe shaped groove produced in the current blocking structure, a lower cladding layer grown by liquid phase epitaxy approximately filling the stripe groove, an active layer on the lower cladding layer in the stripe groove, a waveguide layer on the active layer completely filling the groove, and a diffraction grating on the waveguide layer. |
| 公开日期 | 1992-02-05 |
| 申请日期 | 1989-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42068]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HITOSHI, MIZUOCHI,HIDEYO, HIGUCHI. A semiconductor laser device and production method thereof. GB2221093B. 1992-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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