Method for fabricating single-mode DBR laser with improved yield
文献类型：专利
| 作者 | HWANG, WEN-YEN; ANSELM, KLAUS ALEXANDER; ZHENG, JUN |
| 发表日期 | 2003-10-28 |
| 专利号 | US6638773 |
| 著作权人 | APPLIED OPTOELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating single-mode DBR laser with improved yield |
| 英文摘要 | A method for fabricating a laser for generating single-longitudinal mode laser light at a lasing wavelength. A semiconductor active region for amplifying, by stimulated emission, light in the laser cavity at the lasing wavelength is formed. A grating is formed adjacent to the active region, the grating having a grating period corresponding to a Bragg wavelength substantially equal to the lasing wavelength. An intermediate section of the grating is removed to result in first and second pluralities of gratings separated by a gratingless intermediate section. First and second grating sections are formed comprising the first and second pluralities of gratings, where the first and second grating sections each have a first effective index of refraction. A gratingless phase-shift section is formed in said intermediate section, the phase-shift section being disposed adjacent to the active region and between the first and second grating sections and having a second index of refraction different than the first index of refraction. The phase-shift section has a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve single-longitudinal mode operation. Alternatively, a grating material layer is deposited adjacent to the active region, the grating material layer having a first section, a second section, and an intermediate section between the first and second sections. Gratings are formed in the first and second sections to form a first grating section in the first section, a second grating section in the second section, leaving a gratingless phase-shift section in the intermediate section. |
| 公开日期 | 2003-10-28 |
| 申请日期 | 2002-05-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42070]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED OPTOELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,ANSELM, KLAUS ALEXANDER,ZHENG, JUN. Method for fabricating single-mode DBR laser with improved yield. US6638773. 2003-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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