Semiconductor laser and method of manufacturing the same
文献类型：专利
| 作者 | HAYAKAWA, TOSHIRO; FUKUNAGA, TOSHIAKI; WADA, MITSUGU |
| 发表日期 | 2005-04-05 |
| 专利号 | US6876688 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method of manufacturing the same |
| 英文摘要 | A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of InxGa1−xAsyP1−y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25 μm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer. |
| 公开日期 | 2005-04-05 |
| 申请日期 | 1999-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42071]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | HAYAKAWA, TOSHIRO,FUKUNAGA, TOSHIAKI,WADA, MITSUGU. Semiconductor laser and method of manufacturing the same. US6876688. 2005-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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