半導体レーザ光出力特性シミュレーション方法
文献类型：专利
| 作者 | 麻多 進 |
| 发表日期 | 1998-05-08 |
| 专利号 | JP2778120B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ光出力特性シミュレーション方法 |
| 英文摘要 | PURPOSE:To achieve simulation in a short time and with less error by using a strict expression obtained two times a proper value imaginary part of light equation for a mode gain value. CONSTITUTION:First of all, a semiconductor laser shape 1, a physical constant 2, an analysis model 3, and an initial condition 4 are introduced. This analysis calculates current distribution/carrier distribution within medium. This carrier distribution is used to gain coefficient of the linear gain approximation and the reflection index distribution within medium. which are entered into a light equation for obtaining the mode gain value. For the mode gain value, the value of a strict expression obtained from two times the proper value imaginary part of light expression. Also, the Finite Element Method is used for analyzing the light equation. The calculation time of this method is extremely short when obtaining the basic mode, Thus, extension of calculation time using the light equation analysis step within a repetition routine does not produce any problem. Convergence of light distribution is performed by executing an external routine process 8. |
| 公开日期 | 1998-07-23 |
| 申请日期 | 1989-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42073]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 麻多 進. 半導体レーザ光出力特性シミュレーション方法. JP2778120B2. 1998-05-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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