Quantum well heterostructure lasers with low current density threshold and higher TO values
文献类型：专利
| 作者 | SCIFRES, DONALD R.; BURNHAM, ROBERT D. |
| 发表日期 | 1989-11-21 |
| 专利号 | US4882734 |
| 著作权人 | XEROX CORPORATION, A CORP. OF NY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum well heterostructure lasers with low current density threshold and higher TO values |
| 英文摘要 | A quantum well heterostructure laser has low current density threshold and high TO values and includes a plurality of contiguous semiconductor layers formed on a substrate wherein one or more the layers form an active region capable of quantization of electron states. The active region is confined by a pair of outer superlattice regions which provide optical confinement and low thermal resistance while preventing the development of antiwaveguiding properties. Many configurations are shown to demonstrate the many forms that the overall laser structure can take and, in particular, the nature of the outer or inner cladding regions of different superlattice geometries and forms. |
| 公开日期 | 1989-11-21 |
| 申请日期 | 1988-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42076]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION, A CORP. OF NY |
| 推荐引用方式 GB/T 7714 | SCIFRES, DONALD R.,BURNHAM, ROBERT D.. Quantum well heterostructure lasers with low current density threshold and higher TO values. US4882734. 1989-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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