Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same
文献类型：专利
| 作者 | DOMEN, KAY; KUBOTA, SHINICHI; KURAMATA, AKITO; SOEJIMA, REIKO |
| 发表日期 | 2003-04-29 |
| 专利号 | US6555403 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same |
| 英文摘要 | There are provided a semiconductor laser, a semiconductor light emitting device, and methods of manufacturing the same wherein a threshold current density in a short wavelength semiconductor laser using a nitride compound semiconductor can be reduced. An active layer is composed of a single gain layer having a thickness of more than 3 nm, and optical guiding layers are provided between the active layer and cladding layers respectively. |
| 公开日期 | 2003-04-29 |
| 申请日期 | 1998-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42077]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | DOMEN, KAY,KUBOTA, SHINICHI,KURAMATA, AKITO,et al. Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same. US6555403. 2003-04-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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