Semiconductor laser device, a semiconductor wafer
文献类型:专利
作者 | KONDO, MASAKI; SASAKI, KAZUAKI; MORIMOTO, TAIJI; MATSUMOTO, MITSUHIRO; HOSOBA, HIROYUKI; MATSUI, SADAYOSHI; YAMAMOTO, SABURO; SUYAMA, TAKAHIRO; KONDO, MASAFUMI |
发表日期 | 1991-08-20 |
专利号 | US5042044 |
著作权人 | SHARP KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device, a semiconductor wafer |
英文摘要 | A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.degree.<.vertline..theta..vertline.<4.degree.; a plurality of striped channels formed in a substrate through a current blocking layer in the direction of the other of the [011] and [011] directions; and at least one dummy side groove formed between the striped channels, having a combined cross-sectional area on the plane perpendicular to the other direction greater than that of each of the striped channels. |
公开日期 | 1991-08-20 |
申请日期 | 1990-04-27 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/42078] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | KONDO, MASAKI,SASAKI, KAZUAKI,MORIMOTO, TAIJI,et al. Semiconductor laser device, a semiconductor wafer. US5042044. 1991-08-20. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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