面発光レ-ザ
文献类型：专利
| 作者 | 田中 治夫; 虫上 雅人 |
| 发表日期 | 1996-10-24 |
| 专利号 | JP2574670B2 |
| 著作权人 | ロ-ム 株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面発光レ-ザ |
| 英文摘要 | PURPOSE:To obtain the plane luminescent laser performing laser oscillation at room temperature by laminating and epitaxially growing a reflective film layer and plural synthetic layers on a GaAs substrate with covering the whole surface with a current prevention layer and cutting a luminescent plane on the current stopping layer, which enchroaches into the synthetic layer of uppermost layer. CONSTITUTION:On an N type GaAs substrate 1 having an AuGe layer 8 on the back surface, a reflective film layer 2 in which an N type AlpGa1-pAs layer 21, an N type AlqGa1-qAs layer 22 are laminated alternately is epitaxially grown, on which plural synthetic layers 3 are laminated and grown. At this time, the synthetic layer 3 is composed of a synthetic layer 5 grouping an N type AlxGa1-xAs layer 3 AlyGa1-yAs active layer 32 and a P type AlxGa1-xAs layer 33 as a set. The composition is selected so as to satisfy yy, q>y. After that, an N type GaAs current stopping layer 4, a P type GaAs layer 5, a Ti layer 6 and an Au layer 7 are laminated and grown on the uppermost synthetic layer 3. Then, in the center of surface of those layers, a hole enchroaching into the uppermost synthetic layer 3 is opened and the exposed layer 33 of the layer 3 is used as a luminescent plane 9. |
| 公开日期 | 1997-01-22 |
| 申请日期 | 1983-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42079]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ロ-ム 株式会社 |
| 推荐引用方式 GB/T 7714 | 田中 治夫,虫上 雅人. 面発光レ-ザ. JP2574670B2. 1996-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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