Process of producing semiconductor laser device
文献类型：专利
| 作者 | NAMIZAKI, HIROFUMI; KAN, HIROFUMI |
| 发表日期 | 1976-06-08 |
| 专利号 | US3961996 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Process of producing semiconductor laser device |
| 英文摘要 | N type Ga.sub.0.7 Al.sub.0.3 As, N type GaAs, N type Ga.sub.0.7 Al.sub.0.3 As and P type Ga.sub.1-0.3 Al.sub.0.3 As are epitaxially grown on an N type GaAs substrate in the named order one after another to form superposed layers. A selected portion of the uppermost layer is etched away along with those portions of the following two layers and one part of the lowermost layer located below the selected uppermost layer portion. P type Ga.sub.1-0.3 Al.sub.0.3 As highly doped with zinc is epitaxially grown to fill the removed portions of the layers. Then the zinc is diffused into the adjacent portions of the layers to form a radiative recombination region of a layer on that portion of the GaAs layer converted to the P type. |
| 公开日期 | 1976-06-08 |
| 申请日期 | 1974-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42080]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | NAMIZAKI, HIROFUMI,KAN, HIROFUMI. Process of producing semiconductor laser device. US3961996. 1976-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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