Semiconductor laser diode device
文献类型：专利
| 作者 | KISHINO, KATSUMI; NOMURA, ICHIRO; ASATSUMA, TSUNENORI; NAKAMURA, HITOSHI; OHTOSHI, TSUKURU; KIKAWA, TAKESHI; FUJISAKI, SUMIKO; TANAKA, SHIGEHISA |
| 发表日期 | 2010-02-23 |
| 专利号 | US7668217 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode device |
| 英文摘要 | The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals. |
| 公开日期 | 2010-02-23 |
| 申请日期 | 2007-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42081]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | KISHINO, KATSUMI,NOMURA, ICHIRO,ASATSUMA, TSUNENORI,et al. Semiconductor laser diode device. US7668217. 2010-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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