Extended wavelength opto-electronic devices
文献类型：专利
| 作者 | JEWELL, JACK L. |
| 发表日期 | 1999-03-02 |
| 专利号 | US5877519 |
| 著作权人 | LUMENTUM OPERATIONS LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Extended wavelength opto-electronic devices |
| 英文摘要 | An improved semiconductor device is provided. The semiconductor device comprises a first layer on a restricted growth surface having a first central region with a transverse dimension D and having a first average lattice constant L1 within the first central region; a first, last and at least one intermediate transition layers, the transition layers forming a transition region, the transition region disposed above the first layer, the transition region having a vertical thickness T, and where at least one of the intermediate transition layers has average lattice constants between L1 and a second average lattice constant Lc where the first transition layer has a lattice constant closer to the L1 than Lc and the last transition layer has a lattice constant closer to the Lc than L1; and a second layer disposed on the transition region, the second layer having a second average lattice constant L2, the second layer having a second central region having the average lattice constant Lc and an average lattice constant L3 outside of the second central region, and where Lc does not equal L3; wherein: the transition region has an average fractional change in lattice constant characterized by kappa where kappa =(D/T) {(Lc-L1)/L1}, where | kappa |/=0.0014. Additionally, various preferred semiconductor substrates, transition regions and active regions are discussed. |
| 公开日期 | 1999-03-02 |
| 申请日期 | 1997-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42090]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM OPERATIONS LLC |
| 推荐引用方式 GB/T 7714 | JEWELL, JACK L.. Extended wavelength opto-electronic devices. US5877519. 1999-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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