Single-step-grown transversely coupled distributed feedback laser
文献类型：专利
| 作者 | GUBENKO, ALEXEY; LIVSHITS, DANIIL; MIKHRIN, SERGEY; KRESTNIKOV, IGOR |
| 发表日期 | 2016-05-24 |
| 专利号 | US9350138 |
| 著作权人 | INNOLUME GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Single-step-grown transversely coupled distributed feedback laser |
| 英文摘要 | A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer. A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer. |
| 公开日期 | 2016-05-24 |
| 申请日期 | 2014-02-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42091]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INNOLUME GMBH |
| 推荐引用方式 GB/T 7714 | GUBENKO, ALEXEY,LIVSHITS, DANIIL,MIKHRIN, SERGEY,et al. Single-step-grown transversely coupled distributed feedback laser. US9350138. 2016-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。