埋込み形半導体発光素子
文献类型：专利
| 作者 | 川上 剛司; 岡安 雅信; 竹下 達也 |
| 发表日期 | 1998-08-14 |
| 专利号 | JP2814124B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 埋込み形半導体発光素子 |
| 英文摘要 | PURPOSE:To enable a semiconductor light emitting element to be buried shallow and micronized, lessened in leakage current, and to trap light well by a method wherein a GaAs thin layer of the same conductivity type with a clad layer or an AlGaAs thin layer specified in Al concentration is provided adjacent to an active layer in an Al containing clad layer. CONSTITUTION:An N-GaAs or an N-GaAs thin layer 21 whose Ali concentration is 10% or below is inserted adjacent to an active layer inside an N-Al0.6GaAs clad layer 2. At this point, light emitted from an InGaAs distorted layer is 1mum or so in wavelength and provided from being absorbed by the inserted GaAs thin layer 2 As the refractive index of GaAs is larger than that of AlGaAs, the equivalent refractive index Neq of an active layer becomes slightly larger in propagation mode by providing the thin layer 2 When the GaAs thin layer the same as above is provided inside an upper P-Al0.5GaAs clad layer 4, a refractive index difference can be made large in a lateral direction when a ridge type semiconductor laser is formed, so that light can be effectively trapped in a lateral direction. |
| 公开日期 | 1998-10-22 |
| 申请日期 | 1990-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42093]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 川上 剛司,岡安 雅信,竹下 達也. 埋込み形半導体発光素子. JP2814124B2. 1998-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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