Visible light emitting semiconductor laser with inverse mesa-shaped groove section
文献类型：专利
| 作者 | NITTA, KOICHI; WATANABE, YUKIO; NISHIKAWA, YUKIE; OKAJIMA, MASAKI; HATAKOSHI, GENICHI |
| 发表日期 | 1991-10-15 |
| 专利号 | US5058120 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Visible light emitting semiconductor laser with inverse mesa-shaped groove section |
| 英文摘要 | A visible light emitting semiconductor laser has a double-heterostructure section above the N-type GaAs substrate, which is composed of a nondoped InGaP active layer sandwiched between an N type InGaAlP cladding layer and a P type InGaAlP cladding layer. A P type InGaP thin-film layer formed on the P type cladding layer functions as an etching stopper. Formed sequentially on the etching stopper layer are a P type cladding layer and an N type GaAs current-blocking layer, which have a stripe-shaped groove section in and around their central portion. The groove section has an opening at the top and the bottom portion narrower than the opening, presenting an inverse-trapezoidal cross-sectional profile. This arrangement makes the width of the optical confinement region of the semiconductor laser narrower than that of the current injection region. |
| 公开日期 | 1991-10-15 |
| 申请日期 | 1990-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42095]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | NITTA, KOICHI,WATANABE, YUKIO,NISHIKAWA, YUKIE,et al. Visible light emitting semiconductor laser with inverse mesa-shaped groove section. US5058120. 1991-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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