Light emitting devices with layered III-V semiconductor structures
文献类型：专利
| 作者 | SATO, SHUNICHI; TAKAHASHI, TAKASHI; JIKUTANI, NAOTO |
| 发表日期 | 2001-03-27 |
| 专利号 | US6207973 |
| 著作权人 | RICOH COMPANY, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting devices with layered III-V semiconductor structures |
| 英文摘要 | A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee. |
| 公开日期 | 2001-03-27 |
| 申请日期 | 1999-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42099]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH COMPANY, LTD. |
| 推荐引用方式 GB/T 7714 | SATO, SHUNICHI,TAKAHASHI, TAKASHI,JIKUTANI, NAOTO. Light emitting devices with layered III-V semiconductor structures. US6207973. 2001-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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