半導体レーザからなる製品の製造方法
文献类型：专利
| 作者 | サン-ニー ジョージ チュウ; ラルフ アンドレ ローガン; トーイー タンブン-エク |
| 发表日期 | 1995-11-29 |
| 专利号 | JP1995112097B2 |
| 著作权人 | AMERICAN TELEPH & TELEGR CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザからなる製品の製造方法 |
| 英文摘要 | PURPOSE: To prevent corrosion of a grating by depositing a small quantity of a material containing Ga, As and P at an intermediate temperature, then depositing somewhat large quantity of material containing In, Ga, As and P, and depositing an epitaxial semiconductor material. CONSTITUTION: Manufacturing includes a step of heating a substrate 11 in an atmosphere containing As and P, and a step of evaporating a small quantity of a protective material 121 containing As, Ga and P at an intermediate temperature. Then, the atmosphere contains H2 , AsH3 and PH3 . A small quantity of GaAsP is evaporated at 500 deg.C, and subsequently, somewhat large quantity of InGaAsP is evaporated. Upon completion of the evaporation of the protective material 121, the substrate 11 is heated in the H2 -AsH3 -PH3 atmosphere, and an epitaxial upper layer material is evaporated. Thus, corrosion of a grating 12 on the substrate during heating of the substrate 11 to an evaporation temperature for the upper epitaxial quaternary material 130 may be prevented. |
| 公开日期 | 1995-11-29 |
| 申请日期 | 1991-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42100]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AMERICAN TELEPH & TELEGR CO |
| 推荐引用方式 GB/T 7714 | サン-ニー ジョージ チュウ,ラルフ アンドレ ローガン,トーイー タンブン-エク. 半導体レーザからなる製品の製造方法. JP1995112097B2. 1995-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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