Method of fabricating semiconductor lasers
文献类型：专利
| 作者 | SAKIYAMA, HAJIME; TANAKA, HARUO; MUSHIAGE, MASATO |
| 发表日期 | 1992-10-06 |
| 专利号 | US5153148 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating semiconductor lasers |
| 英文摘要 | The invention is directed to a semiconductor laser wherein the first embodiment is characterized in that the first upper portion cladding layer is assumed to be a double layer construction, the upper layer portion is assumed to be higher in carrier concentration than the lower layer portion, the series resistance component is restrained, so that the sequential direction voltage VF may be lowered without damaging the other characteristics such as oscillation start current I th and so on. |
| 公开日期 | 1992-10-06 |
| 申请日期 | 1990-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42102]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | SAKIYAMA, HAJIME,TANAKA, HARUO,MUSHIAGE, MASATO. Method of fabricating semiconductor lasers. US5153148. 1992-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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