光集積回路素子の製造方法
文献类型：专利
| 作者 | 浜田 健; 渋谷 隆夫; 和田 優; 清水 裕一; 伊藤 国雄; 寺本 巌 |
| 发表日期 | 1994-04-27 |
| 专利号 | JP1994032329B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光集積回路素子の製造方法 |
| 英文摘要 | PURPOSE:To prevent the decrease of reflectance and efficiency by a method wherein one side surface of a groove is formed into the cavity surface of a laser by etching through a photo mask provided on an addition layer located at part of the grown surface, and the laser end surface is made vertical. CONSTITUTION:An N type GaAlAs clad layer 2, a non-doped GaAlAs layer 4, and a P type GaAs contact layer 5 are successively formed on an N type (100) GaAs substrate 1, and a non-doped GaAlAs cap layer 10 is additionally formed at part of the surface. A photo mask 6 having an edge parallel with the mask on the layer 10 is formed on the layer 5, and a groove reaching the substrate 1 is formed by chemical etching through both the masks 6. At this time, the side wall of the groove on the layer 10 side becomes vertical by the difference in etching speed between the layers 10 and 5, and the other wall inclines; therefore, the vertical wall is made as the cavity surface of the laser, and the other as the photo receiving surface of the light emitting element. |
| 公开日期 | 1994-04-27 |
| 申请日期 | 1984-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42103]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | 浜田 健,渋谷 隆夫,和田 優,等. 光集積回路素子の製造方法. JP1994032329B2. 1994-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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