High indium containing InGaN substrates for long wavelength optical devices
文献类型：专利
| 作者 | SCHMIDT, MATHEW; D'EVELYN, MARK P. |
| 发表日期 | 2012-11-06 |
| 专利号 | US8306081 |
| 著作权人 | SORAA, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High indium containing InGaN substrates for long wavelength optical devices |
| 英文摘要 | An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride substrate member has an indium content ranging from about 1 to about 50% in weight. Preferably, the gallium nitride substrate member has a semipolar crystalline surface region or a non-polar crystalline surface region. The device has an epitaxially formed laser stripe region comprising an indium content ranging from about 1 to about 50% and formed overlying a portion of the semipolar crystalline orientation surface region or the non-polar crystalline surface region. The laser stripe region is characterized by a cavity orientation in a predefined direction according to a specific embodiment. The laser strip region has a first end and a second end including respective a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region. |
| 公开日期 | 2012-11-06 |
| 申请日期 | 2010-05-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42105]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA, INC. |
| 推荐引用方式 GB/T 7714 | SCHMIDT, MATHEW,D'EVELYN, MARK P.. High indium containing InGaN substrates for long wavelength optical devices. US8306081. 2012-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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