Antiguided semiconductor laser array with edge reflectors
文献类型：专利
| 作者 | MEHUYS, DAVID G.; HARDY, AMOS A.; WELCH, DAVID F.; WAARTS, ROBERT G.; SCIFRES, DONALD R. |
| 发表日期 | 1992-10-27 |
| 专利号 | US5159604 |
| 著作权人 | SDL, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Antiguided semiconductor laser array with edge reflectors |
| 英文摘要 | In a semiconductor laser array structure in which antiguided regions between high effective refractive index waveguide regions experience greater gain then the waveguide regions, structures introduced at the sides of the array, next to the edgemost waveguides and not on the array period, reflect laterally transmitted radiation back toward the center of the array. The edge reflecting structures may be waveguide regions having widths of (m'+1/2) half-wavelengths, where "m'" is zero or a positive integer, compared to array waveguides with width m, where "m" is an integer not necessarily equal to "m'". The edge reflecting structures may also be stacks of such waveguides, where the regions between the edge waveguides are of a width substantially equal to (n'+1/2) half-wavelengths, compared to antiguide element widths of n half-wavelengths. The two integers n and n' may be, but are not necessarily, equal. Alternatively, the edge reflectors can be mirrors fabricated at the side edges of the array or by disordering the active region beyond the edgemost waveguides to form a refractive index step. The mirrors should be positioned a distance substantially a/2 from the edgemost emitters, where "a" is the array period. |
| 公开日期 | 1992-10-27 |
| 申请日期 | 1991-07-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42107]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SDL, INC. |
| 推荐引用方式 GB/T 7714 | MEHUYS, DAVID G.,HARDY, AMOS A.,WELCH, DAVID F.,et al. Antiguided semiconductor laser array with edge reflectors. US5159604. 1992-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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