Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor
文献类型：专利
| 作者 | FAN, YONGPING; HAN, JUNG; NURIMIKKO, ARTO V.; GUNSHOR, ROBERT L.; HE, LI |
| 发表日期 | 1996-08-20 |
| 专利号 | US5548137 |
| 著作权人 | RESEARCH CORPORATION TECHNOLOGIES, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor |
| 英文摘要 | Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula AxB(1-x)C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of the present invention discloses a monolithic multicolor light emitting element capable of emitting four colors and a method for fabricating same. The monolithic multicolor element includes four II-VI semiconductor light emitting devices formed on a single III-V substrate. |
| 公开日期 | 1996-08-20 |
| 申请日期 | 1994-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42108]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RESEARCH CORPORATION TECHNOLOGIES, INC. |
| 推荐引用方式 GB/T 7714 | FAN, YONGPING,HAN, JUNG,NURIMIKKO, ARTO V.,et al. Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor. US5548137. 1996-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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