Method of manufacturing wafer bonded semiconductor laser device
文献类型：专利
| 作者 | IWAI, NORIHIRO; KASUKAWA, AKIHIKO |
| 发表日期 | 1998-12-29 |
| 专利号 | US5854090 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing wafer bonded semiconductor laser device |
| 英文摘要 | This invention gives birth to a semiconductor laser device which is equipped with a semiconductor substrate, a laser active layer with a first bandgap energy overlying the preceding semiconductor substrate, and a p-type cladding layer and an n-type cladding layer between which the preceding active layer is interposed. In addition, the referenced p-type cladding layer has a second bandgap energy exceeding 35 eV and remaining greater than the first bandgap energy. Direct bonding technique is adopted for fabricating the semiconductor laser device in question in place of epitaxial growth technique, because the cladding layer and active layer differ in lattice constant. |
| 公开日期 | 1998-12-29 |
| 申请日期 | 1996-12-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42115]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | IWAI, NORIHIRO,KASUKAWA, AKIHIKO. Method of manufacturing wafer bonded semiconductor laser device. US5854090. 1998-12-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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