Semiconductor laser producing visible light
文献类型:专利
作者 | TAKEMI, MASAYOSHI; HAYAFUJI, NORIO; SUSAKI, WATARU |
发表日期 | 1995-02-28 |
专利号 | US5394417 |
著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser producing visible light |
英文摘要 | A semiconductor laser for producing visible light includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor first cladding layer, a semiconductor active layer of GaAs1-yPy (y=0.45), and a second conductivity type second cladding layer, the first cladding layer, the active layer, and the second cladding layer being successively disposed on the semiconductor substrate, the first and second cladding layers having substantially the same composition and a different composition from the active layer, thereby forming heterojunctions with the active layer, and having a lattice constant different from the lattice constant of the active layer and introducing stress into the active layer without producing dislocations in the active layer; and first and second electrodes electrically connected to the substrate and the second cladding layer, respectively. |
公开日期 | 1995-02-28 |
申请日期 | 1993-11-12 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/42118] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | TAKEMI, MASAYOSHI,HAYAFUJI, NORIO,SUSAKI, WATARU. Semiconductor laser producing visible light. US5394417. 1995-02-28. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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