Semiconductor device having a current-constricting spaces and method of manufacturing the device
文献类型：专利
| 作者 | KINOSHITA, JUNICHI |
| 发表日期 | 2000-02-29 |
| 专利号 | US6031857 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device having a current-constricting spaces and method of manufacturing the device |
| 英文摘要 | A burying-heterostructure (BH) type semiconductor laser having a constricted mesa which has an active region. The laser has two spaces, located above and below the active region, for constricting a current to reduce a leakage current. The laser further has a first group of columns extending through the space located above the active region, and a second group of columns extending through the space located below the space. The columns of the first group are staggered in a vertical plane, with respect to the columns of the second group. |
| 公开日期 | 2000-02-29 |
| 申请日期 | 1997-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42122]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KINOSHITA, JUNICHI. Semiconductor device having a current-constricting spaces and method of manufacturing the device. US6031857. 2000-02-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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