Electrically pumped Group IV semiconductor micro-ring laser
文献类型:专利
作者 | SOREF, RICHARD A.; EMELETT, STEPHEN J. |
发表日期 | 2008-06-24 |
专利号 | US7391801 |
著作权人 | AIR FORCE, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Electrically pumped Group IV semiconductor micro-ring laser |
英文摘要 | An electrically pumped semiconductor laser is provided as including a waveguide structure disposed on the substrate. An optical coupling layer is disposed on the substrate and the waveguide. A resonator layer is disposed on the optical coupling layer and may be adapted to include a photonic crystal lattice having a plurality of substantially cylindrical pores extending downwardly into the resonator layer. An insulating cap layer may be disposed on the resonator layer which operatives to seal the photonic crystal lattice. A first plug filled vias is formed on a central region of the cap layer, which extends downwardly to permit a bottom portion of the first plug to communicate with the photonic crystal lattice. Further, a second plug filled vias is formed on an edge region of the cap layer and extends downwardly to permit a bottom portion of the second plug to communicate with the photonic crystal lattice. |
公开日期 | 2008-06-24 |
申请日期 | 2005-11-25 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/42126] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | AIR FORCE, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
推荐引用方式 GB/T 7714 | SOREF, RICHARD A.,EMELETT, STEPHEN J.. Electrically pumped Group IV semiconductor micro-ring laser. US7391801. 2008-06-24. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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