Light emitting device, manufacturing method thereof, and optical transceiver
文献类型：专利
| 作者 | SAGAWA, MISUZU; ODA, KATSUYA; TANI, KAZUKI |
| 发表日期 | 2015-06-09 |
| 专利号 | US9052449 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting device, manufacturing method thereof, and optical transceiver |
| 英文摘要 | The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate. |
| 公开日期 | 2015-06-09 |
| 申请日期 | 2013-11-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | SAGAWA, MISUZU,ODA, KATSUYA,TANI, KAZUKI. Light emitting device, manufacturing method thereof, and optical transceiver. US9052449. 2015-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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