Semiconductor laser using gallium nitride series compound semiconductor
文献类型：专利
| 作者 | SASANUMA, KATSUNOBU; SAITO, SHINJI; HATAKOSHI, GENICHI; ITAYA, KAZUHIKO; ONOMURA, MASAAKI; SUGIURA, RISA; NAKASUJI, MIKIO; FUJIMOTO, HIDETOSHI; YAMAMOTO, MASAHIRO; NUNOUE, SHINYA |
| 发表日期 | 2001-06-26 |
| 专利号 | US6252894 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser using gallium nitride series compound semiconductor |
| 英文摘要 | A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer. |
| 公开日期 | 2001-06-26 |
| 申请日期 | 1999-03-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42133]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | SASANUMA, KATSUNOBU,SAITO, SHINJI,HATAKOSHI, GENICHI,et al. Semiconductor laser using gallium nitride series compound semiconductor. US6252894. 2001-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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