半導体レ-ザ素子
文献类型：专利
| 作者 | 清水 明 |
| 发表日期 | 1995-03-29 |
| 专利号 | JP1995028093B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ素子 |
| 英文摘要 | PURPOSE:To obtain a variable wavelength semiconductor laser element, which has a broad variable wavelength range and is operated at high efficiency, by providing a plurality of light emitting layers with different oscillating wavelengths in the same light guide structure. CONSTITUTION:On an N-type GaAs substrate 1, N-type GaAs is grown by 1mum as a buffer layer 2, and N-type Al0.7Ga0.3As is grown by a thickness of 2mum as a clad layer 5. Then, a barrier layer 92, a first light emitting layer 10, a barrier layer 11, a second light emitting layer 12 and a barrier layer 91 are sequentially grown on the clad layer 5. Then, parts of a cap layer 6 and a clad layer 3 are etched to the vicinity of the barrier layer 91, and a stripe shaped protruding region is formed. Then the surface is masked with a dielectric layer. An electrode 8 is evaporated so as to contact with only the upper part of the cap layer 6, which is not etched. An electrode 7 is further evaporated on the bottom surface of the substrate The laminated bodies are cleaved, and an element having a laser resonance surface is formed. Thus the variable wavelength range of the semiconductor laser element can be made wide, and the light emitting efficiency can be enhanced. |
| 公开日期 | 1995-03-29 |
| 申请日期 | 1987-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 清水 明. 半導体レ-ザ素子. JP1995028093B2. 1995-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。