Semiconductor devices and methods for generating light
文献类型：专利
| 作者 | JI, CHEN; GIOVANE, LAURA |
| 发表日期 | 2011-04-19 |
| 专利号 | US7929588 |
| 著作权人 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor devices and methods for generating light |
| 英文摘要 | Semiconductor devices and a method for generating light in a semiconductor device are invented and disclosed. The method includes the steps of forming a vertical cavity surface emitting laser including an active region and an oxide layer, the active region separated from the oxide layer and configured to generate light in response to an injected current and introducing an implant layer adjacent and underneath the oxide layer to confine the injected current to a region of the device where charge carriers are combining to generate light. The semiconductor devices include an implant layer between the oxide layer and the active region. The implant layer prevents lateral leakage current from exiting a region of the device where charge carriers are combining to generate light. |
| 公开日期 | 2011-04-19 |
| 申请日期 | 2009-01-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42141]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED |
| 推荐引用方式 GB/T 7714 | JI, CHEN,GIOVANE, LAURA. Semiconductor devices and methods for generating light. US7929588. 2011-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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