Semiconductor laser having a multiple quantum well structure doped with impurities
文献类型：专利
| 作者 | CHINONE, NAOKI; UOMI, KAZUHISA; FUKUZAWA, TADASHI; MATSUEDA, HIDEAKI; KAJIMURA, TAKASHI; OHTOSHI, TSUKURU |
| 发表日期 | 1989-11-14 |
| 专利号 | US4881235 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser having a multiple quantum well structure doped with impurities |
| 英文摘要 | In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1x1018 to about 1x1019 cm-3. |
| 公开日期 | 1989-11-14 |
| 申请日期 | 1987-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42148]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | CHINONE, NAOKI,UOMI, KAZUHISA,FUKUZAWA, TADASHI,et al. Semiconductor laser having a multiple quantum well structure doped with impurities. US4881235. 1989-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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