Semiconductor optoelectronic device and method of fabricating the same
文献类型：专利
| 作者 | SON, JOONG-KON; RYU, HAN-YOUL; SAKONG, TAN; PAEK, HO-SUN; LEE, SUNG-NAM |
| 发表日期 | 2010-05-25 |
| 专利号 | US7724795 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optoelectronic device and method of fabricating the same |
| 英文摘要 | Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device. |
| 公开日期 | 2010-05-25 |
| 申请日期 | 2007-07-25 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42161]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SON, JOONG-KON,RYU, HAN-YOUL,SAKONG, TAN,et al. Semiconductor optoelectronic device and method of fabricating the same. US7724795. 2010-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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