Transverse-mode oscillation semiconductor laser device
文献类型：专利
| 作者 | OKAJIMA, MASAKI; HATAKOSHI, GENICHI; ISHIKAWA, MASAYUKI; UEMATSU, YUTAKA; MOTEGI, NAWOTO |
| 发表日期 | 1991-11-12 |
| 专利号 | US5065404 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA, CORP. OF JPX |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Transverse-mode oscillation semiconductor laser device |
| 英文摘要 | A visible-light wavelength continuous oscillation laser is disclosed which has an N type GaAs substrate, an N type GaAlAs cladding layer formed on the substrate, and a non-doped GaAlAs active layer formed on the cladding layer. The laser further includes two N type GaAlAs layers, a P type GaAlAs optical guide layer, a P type cladding layer consisting of upper and lower portions, and a ridge section. The N type GaAlAs layers contact both sides of the ridge section. The optical guide layer is sandwiched between the upper and lower portions of the P type cladding layer, is located within the ridge section, and has a refractive index greater than that of the P type cladding layer. The distance between the active layer and the optical guide layer does not depend on the condition in which etching is performed to form the ridge section, but depends basically on the time required to grow crystal. |
| 公开日期 | 1991-11-12 |
| 申请日期 | 1990-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42166]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA, CORP. OF JPX |
| 推荐引用方式 GB/T 7714 | OKAJIMA, MASAKI,HATAKOSHI, GENICHI,ISHIKAWA, MASAYUKI,et al. Transverse-mode oscillation semiconductor laser device. US5065404. 1991-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。