中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Method of fabricating ridge waveguide semiconductor light-emitting device

文献类型:专利

作者HO, JIN-KUO; CHIU, CHIENCHIA; CHENG, CHENN-SHIUNG; CHEN, TSE-JUN
发表日期2001-01-16
专利号US6174747
著作权人INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
国家美国
文献子类授权发明
其他题名Method of fabricating ridge waveguide semiconductor light-emitting device
英文摘要A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.
公开日期2001-01-16
申请日期1999-03-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/42170]  
专题半导体激光器专利数据库
作者单位INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
推荐引用方式
GB/T 7714
HO, JIN-KUO,CHIU, CHIENCHIA,CHENG, CHENN-SHIUNG,et al. Method of fabricating ridge waveguide semiconductor light-emitting device. US6174747. 2001-01-16.

入库方式: OAI收割

来源:西安光学精密机械研究所

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