Method of fabricating ridge waveguide semiconductor light-emitting device
文献类型：专利
| 作者 | HO, JIN-KUO; CHIU, CHIENCHIA; CHENG, CHENN-SHIUNG; CHEN, TSE-JUN |
| 发表日期 | 2001-01-16 |
| 专利号 | US6174747 |
| 著作权人 | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of fabricating ridge waveguide semiconductor light-emitting device |
| 英文摘要 | A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide. |
| 公开日期 | 2001-01-16 |
| 申请日期 | 1999-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/42170]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | HO, JIN-KUO,CHIU, CHIENCHIA,CHENG, CHENN-SHIUNG,et al. Method of fabricating ridge waveguide semiconductor light-emitting device. US6174747. 2001-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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